2SC2244 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2 S C 2 2 4 4
DESCRIPTION
- High Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 400V (Min)
- High Switching Speed
APPLICATIONS
- Power switching
- Power amplification
- Power driver ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB B Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2 S C 2 2 4 4
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V hFE DC Current Gain IC= 3A; VCE= 5V 10 ICBO Collector Cutoff Current VCB= 450V; IE= 0 TC=125℃ 1.0 4.0 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA Switching Times tr Rise Time 1.0 μs tstg Storage Time 2.0 μs tf Fall Time IC=3A; IB1=- IB2= 0.6A 1.0 μs isc Website：www.iscsemi.cn