2SC2243 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
t3s.ini-Condu.ctoi iJ-* 10 ducts,, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC2243
DESCRIPTION
- High Collector-Emitter Sustaining Voltage- : VCEo(sus)= 400V (Min)
- High Switching Speed
APPLICATIONS
- Power switching
- Power amplification
- Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature Range MAX 450 400 100 200 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT °c/w 3, PIN .BASE i.BvUTTER 3. COLLECT OR (CASE) TO-3 package r IE t
- A [*- N-*j 1 1 -JU-D xd^\\ < VL^x" '~f353 "*1 _ ( — , (PL ? C nuii DIM MN MAX A 3900 B ?S30 C 7.80 0 0.30 E 1.10 2867 850 1 to 1.60 Q 1 0 32 H S4& K ii.iO I 1675 K 1940 _3 400 I1 30,00 V 430 1350 1705 1962 420 3020 450 t i B NJ Semi-CoiKluctors reserves the right It) change test conditions, parameter limits and package dimensions uithout noiice. Information furnished by NJ Semi-Conductors is believed lo he hoth accurate and reliable at the time ot'goiiu lo press. I louever. N.I Seini-C'oiidiictors assumes no responsibility lor any errors or omissions discovered in its use. N.I Seini-C'onduciors encoiirayes cuslomers to \\erily thai dalasheels are ciirrenl helore placing orders. Quality Serni-Conductors
Silicon NPN Power Transistor 2SC2243
ELECTRICAL CHARACTERISTICS
Tc=25 C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(sat) hFE ICBO ICEO IEBO PARAMETER Collector-Emitter Sustainig Voltage ' Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current CONDITIONS lc= 50mA; L= 25mH lc= 2A; IB= 0.4A lc= 2A; IB= 0.4A lc= 2A; VCE= 5V VCB= 450V; IE= 0 TC=125"C VCE= 400V; IB= 0 ' VEB= 5V; lc= 0 MIN 400 TYP. MAX 1.2 1.5 1.0 4.0 5.0 1.0 UNIT V V V mA mA mA Switching Times tr tstg tf Rise Time Storage Time Fall Time lc=2A; IB1=- IB2= 0.4A 1.0 2.0 1.0 M s M s M s