2SC2223-3 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SC2223 ■ Features

  • Collector Current Capability IC=20mA
  • Collector Emitter Voltage VCEO=20V ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 4 Collector Current - Continuous IC 20 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 125 Storage Temperature Range Tstg -55 to 125 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA, IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 4 Collector-base cut-off current ICBO VCB= 25 V , IE= 0 100 Emitter cut-off current IEBO VEB= 3V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1mA 0.3 Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=1mA 1.2 Base - emitter voltage VBE VCE= 6V, IC= 1mA 0.72 DC current gain hFE VCE= 6V, IC= 1mA 40 180 Noise Figure NF VCE= 6V, IE= -1mA,RG=50Ω,f=100MHz 3 dB Collector output capacitance Cob VCB= 6V, IE= 0,f=1MHz 1 pF Collector to base time constant Ccrb'b VCE= 6V, IE= -1mA,f=31.9MHz 12 pS Transition frequency fT VCE= 6V, IE= -1mA 400 600 MHz V nA V ■ Classification of hfe Type 2SC2223-F12 2SC2223-F13 2SC2223-F14 Range 40-80 60-120 90-180 Marking F12 F13 F14 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 Transistors NPN Transistors 2SC2223 ■ Typical Characterisitics

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SC2223 ■ Typical Characterisitics