2SC2209 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, (i nc.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2209

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- , : V(BR)CEo= 40V(Min)
  • High Collector Power Dissipation
  • Complement to Type 2SA963

APPLICATIONS

  • Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VGEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 1.5 150 -55-150 UNIT V V V A A W
  • .-<; PIN 1. EMITTER 2. COLLECT OR i 3. BASE , 2 ; TO-126 package -~r r H D-» fi a G r r .., ,, .,,„ I « •
  • I*- 1.1*. 3 3 DIM A B D F H J K R V ; o JT V
  • — D t ' A i L k K ~~"" ji mm WIN 10.70 7.70 2.60 0.66 3.10 4.43 2.00 1.35 15.30 3.70 0,40 117 MAX 10.93 7.SO 2,80 0.86 3,30 4.63 2,20 11 .55 16,30 3,90 ft.so 137 "" ' — |~-J
  • -R N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by N.I Semi-Conductors is believed to he holh accurate and reliable at the time of cuin to press. I loue\\cr. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Sonii-Conduclois ent.-oiira.ues customers to verily that datasheets are current before placing orders. Quality Semi-Conductors

Silicon NPN Power Transistor 2SC2209

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO VcE(sat) VBE(sat) ICBO ICEO ICEO HFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc=1mA; IE=0 lc= 2mA; \\B-~- 0 IC=1.5A; IB= 150mA lc= 2A; IB= 0.2rnA VCB= 20V; IE 0 VCE=10V;IB- 0 VEB= 5V; lc 0 lc= 1A;VCE=5V IE= -0.5A; VOB= 5V IE=0;VCB=5V, f,est=1MHz MIN TYP. 150 MAX 1.0 1.5 100 220 UNIT V V V V MA U A M A MHz PF hFE Classifications Q 80-160 R 120-220