2SC2209 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2209
DESCRIPTION
- With TO-126 package
- Complement to type 2SA963
- High collector power dissipation
APPLICATIONS
- For low-frequency power amplification PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 1.5 A ICM Collector current-peak 3 A PC Collector power dissipation T C=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2209 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=2mA;IB=0 40 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 50 V VCEsat Collector-emitter saturation voltage I C=1.5A ;IB=150mA 1.0 V VBEsat Base-emitter saturation voltage I C=2A ;IB=0.2A 1.5 V ICBO Collector cut-off current V CB=20V; IE=0 1 µA ICEO Collector cut-off current V CE=10V; IB=0 100 µA IEBO Emitter cut-off current V EB=5V; IC=0 10 µA hFE DC current gain I C=1A ; VCE=5V 80 220 COB Output capacitance I E=0 ; VCB=5V;f=1MHz 50 pF fT Transition frequency I C=0.5A ; VCB=5V,f=200MHz 150 MHz hFE Classifications Q R 80-160 120-220
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2209 PACKAGE OUTLINE Fig.2 Outline dimensions
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2209