2SC2209 ISC
Document overview
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- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 40V(Min)
- High Collector Power Dissipation
- Complement to Type 2SA963
APPLICATIONS
- Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A PC Collector Power Dissipation @ TC=25℃ 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 B 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2mA B 1.5 V ICBO Collector Cutoff Current VCB= 20V; IE= 0 1 μA ICEO Collector Cutoff Current VCE= 10V; IB= 0 B 100 μA ICEO Collector Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 5V 80 220 fT Current-Gain—Bandwidth Product IE= -0.5A; VCB= 5V 150 MHz COB Output Capacitance IE= 0; VCB= 5V, ftest= 1MHz 50 pF hFE Classifications Q R 80-160 120-220 isc Website：www.iscsemi.cn 2