2SC2206 PANASONIC

Document overview

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Technical content

Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 n Features l Optimum for RF amplification of FM/AM radios. l High transition frequency fT. l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9–0.1 1.0–0.1 1.0 2.5–0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1–0.2 4.5 –0.1 2.5 2.5 123Symbol V CBO V CEO C EBO IC PC Tj Tstg Ratings 400 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Common emitter reverse transfer capacitance Reverse transfer impedance Symbol V CBO V CEO V EBO hFE * V CE(sat) V BE fT NF C re Zrb Conditions IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CB = 10V , IE = –1mA IC = 10mA, IB = 1mA V CE = 10V , IC = 1mA V CB = 10V , IE = –1mA, f = 200MHz V CB = 10V , IE = –1mA, f = 5MHz V CE = 10V , IC = 1mA, f = 10.7MHz V CB = 10V , IE = –1mA, f = 2MHz min 150 typ 0.1 0.7 300 2.8 max 220 1.5 Unit V V V V V MHz dB pF W *hFE Rank classification Rank B C hFE 70 ~ 140 110 ~ 220

PC — Ta I C — V CE IC — IB IB — V BE IC — V BE V CE(sat) — IC hFE — IC fT — IE Zrb — IE 0 160 40 120 80 14020 100 60 500 400 300 200 100 450 350 250 150 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 8 61 2 Ta=25˚C IB=100mA 20mA 40mA 60mA 80mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0 100 8020 60 40 15.0 12.5 10.0 7.5 5.0 2.5 VCE =10V Ta=25˚C Base current IB (mA) Collector current IC (mA ) 120 100 VCE =10V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (mA) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 240 200 160 120 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 400 300 100 250 350 200 150 Ta=25˚CVCB =10V Emitter current IE (mA ) Transition frequency fT (MHz ) VCB =10V f=2MHz Ta=25˚C Emitter current IE (mA ) Reverse transfer impedance Zrb (W )

C re — V CE PG — IE NF — IE bie — gie bre — gre bfe — gfe boe — goe 0.1 1 10 1000.3 3 30 3.0 2.5 2.0 1.5 1.0 0.5 f=10.7MHz Ta=25˚C IC =3mA 1mA Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) f=100MHz VCE =10V Ta=25˚C Emitter current IE (mA ) Power gain PG (dB) VCB =6V f=100MHz R g=50W Ta=25˚C Emitter current IE (mA ) Noise figure NF (dB) 04 0 3282 4 16 yie=gie+jbie VCE =10V f=10.7MHzIE=–1mA –2mA –4mA –7mA 100 Input conductance gie (mS ) Input susceptance bie (mS ) – 0.6 10– 0.1 – 0.2 – 0.3 – 0.4 – 0.5 yre=gre+jbre VCE =10V f=10.7MHz IE=–1mA 100 Reverse transfer conductance gre (mS ) Reverse transfer susceptance bre (mS ) 0 100 8020 60 40 –120 –20 –40 –60 –80 –100 yfe=gfe+jbfe VCE =10V f=10.7MHz 100 10.7 – 0.1mA –1mA –2mA IE=–4mA 100 100 Forward transfer conductance gfe (mS ) Forward transfer susceptance bfe (mS ) 1.2 1.0 0.8 0.6 0.4 0.2 yoe=goe+jboe VCE =10V f=10.7MHz IE=–1mA 100 Output conductance goe (mS ) Output susceptance boe (mS )