2SC2168 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2168
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= 200V(Min)
- DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, lc= 0.7A)
APPLICATIONS
- Designed for TV vertical output,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE 200 200 150 -55-150 UNIT V V V A A W C T * * PIN 1.BASE 2. COLLECT OR 3. BETTER TO-220C package U 4 I 5 K C I "* B "1 :f€fy H r *4J-« D j y DIM A B D F K j K L R S U V mm MIN 15.50 9.90 4.20 0.70 3.40 4.98 2>6S 0.44 13. ,00 1,20 2.70 2.3G 1.29 G.45 8.00 MAX 15.90 10.20 450 0.90 3.7$ 5.18 2.90 O.^Q 13.40 1.43 2.90 2.70 1.35 6.65 8.86 r "H j N.I Semi-CoiHluctors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time ofgu to press. I loue\\er. N.I Semi-Comliietors assumes no responsibility lor any errors or omissions discovered in its use N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC2168
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) ICBO IEBO hFE COB ft PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= 25mA; IB= 0 lc= 0.7A; IB= 0.07A VCB= 200V; IE= 0 VEB= 6V: lc= 0 lc=0.7A;VCE=10V lE=0;VCB=10V;f=1IVIHz IE= -0.2A ; VCE= 12V MIN 200 TYP. MAX 1.0 UNIT V V MA MA PF MHz Switching Times ton tstg tf Turn-On Time Storage Time Fall Time IC=1A; |B1=-|B2=o.1A; Vcc= 20V; RL= 20Q 1.0 3.0 1.5 M s M s M s