2SC2168 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2168
DESCRIPTION
- With TO-220 package
- High collector-emitter breakdown voltage : VCEO=200V(min)
APPLICATIONS
- Power amplifier applications
- TV vertical deflection applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2168 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ;IB=0 200 V V(BR)CBO Collector-base breakdown voltage I C=0.5mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage I E=0.5mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage I C=0.5A ;IB=50m A 1.0 V ICBO Collector cut-off current V CB=200V;IE=0 10 µA IEBO Emitter cut-off current V EB=5V; IC=0 10 µA hFE DC current gain I C=0.1A ; VCE=5V 50 fT Transition frequency I C=0.1A ; VCE=10V 20 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2168 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)