2SC2167 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
3sii.su ^s.mi-dondiicto'i L/^roducti, Una. C^ J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2167
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= 150V(Min)
- DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, lc= 0.7A)
APPLICATIONS
- Designed for TV vertical output,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @T0=25C Junction Temperature Storage Temperature VALUE 150 150 150 -55-150 UNIT V V V A A W i i . I PIN i 1.BASE 2. COLLECTOR S.ailTTER TO-22QC package U k A I fr K T c ~l TT~ "* B "1 -* V *i I .11 ^ C r f+i-f Q V DIM A B C D F G H J K L Q R S U V mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.€S 0.44 13,00 1.20 2.70 2,30 1.29 6.45 8.66 MAX 15.90 10. JO A50 0.90 3.70 5.18 2.90 0,60 13.40 1,45 2.90 2.70 1.35 6.65 8.86 — 1 * *• j NJ Scnii-CoiKluctors reserves the right to chunge test conditions, parameter limits and pucknge dimensions without notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time ofyuin to press. I lo\\\\ever, N.I Semi-Conductors assumes no responsibility lor any errors or omission.-, discovered in its use. N.I Semi-Condnctors enenurafies customers to \\erily that datasheets are ttirrent he fore placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC2167
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) ICBO IEBO hFE COB fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS lc= 25mA; IB= 0 lc= 0.7A; IB= 0.07A VCB=150V; IE=0 VEB= 6V; lc= 0 IC=0.7A; VCE= 10V !E=O; VCB= 10V; 'f= 1MHz IE= -0.2A ; VCE= 12V MIN 150 TYP. MAX 1.0 UNIT V V M A MA PF MHz Switching Times ton *stg tf Turn-On Time Storage Time Fall Time lc=1A; IB1=-IB2=0,1A; Vcc= 20V; RL= 20Q 1.0 3.0 1.5 M s M s M s