2SC2151 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2151
DESCRIPTION
- With TO-3 package
- High voltage ,high speed
APPLICATIONS
- Converters
- Inverters
- Switching regulators
- Motor controls PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-Peak 30 A PT Total power dissipation T C=25℃ 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb Thermal resistance from junction to mounting base 1.0 ℃/W Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2151 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ; IB=0 400 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage I C=10A; IB=2A 1.5 V VBEsat Base-emitter saturation voltage I C=10A; IB=2A 2.0 V ICBO Collector cut-off current V CB=500V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=7V; IC=0 0.1 mA hFE DC current gain I C=7.5A ; VCE=5V 10 fT Transition frequency I C=0.5A ; VCE=10V 15 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2151 PACKAGE OUTLINE Fig.2 Outline dimensions