2SC2098 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 isc SiliconNPNPowerTransistor 2SC2098
DESCRIPTION
- SiliconNPNepitaxial planar
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- The2SC2098 isdesignedfor25=50MHzAFpower amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 70 V VCEO Collector-EmitterVoltage 70 V VEBO Emitter-BaseVoltage 4 V IC CollectorCurrent-Continuous 6 A PC TotalPowerDissipation @TC=25℃ 25 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 isc SiliconNPNPowerTransistor 2SC2098 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=25mA;IB=0 70 V ICBO CollectorCutoffCurrent VCB=70V;IE=0 1 mA IEBO EmitterCutoffCurrent VEB=6V;IC=0 1 mA hFE DCCurrentGain IC=4A;VCE=5V 20 100