2SC2098 TOSHIBA
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
3 ae ICONDU R TOSHIBA TRANSISTOR ae Bee : 2802098 az TECHNICAL DATA SILICON NPN EPITAXIAL PLANAR ~ O The 2807098 is designed for 25~50MHx RF power amplifier applications © RF power output 13W MIN. f=28MHx Vee=!eV High power gain 114B MIN. Unit in mm © Recommended for 12W PEP SSB Citizen Band transceiver reo > 103Max. 1 a5 3, | eo 18] gssxse e i 4) ay pie T KT O . Cina sie : Ey | eH = Hl 3 i faz 6 /, °, eo elite; MAXIMUM RATINGS — (Ta=25 °C) ao FETS e CHARACTERISTIC SYINBOL | RATING ry ore & Collector to Base Voltage Vogo L aasE Collector to Emitter | v 0 & COLLECTOR( HSaT SINK Voltage (Raz On) | Yorr 7 v 3 EMITTER Emitter to Base Voltage | Vapo 4 . jaDRC TO-220A5 | Collector Current Te 6 EDR : ab ~ _ ' ElAy 80-46 Emitter Current | fe A - TOSHIBA 2-10 | Collector Power | Pe te Dissipation (To=25°C) Junction Pemperature Tj 150: °c Storage Temperature | ists 55 ~150 “c
ELECTRICAL CHARACTERISTICS Ta=25°C ° CHARACTERISTIC SYMBOL CONDITION Collector Cutoff current] Iopo | Vop=40V Ipe0 [= [= fot] a | Collectcr to Base v lee =0 r Breakdowr. Voltage (eAcBO o-1Onk Ip 70 y Collector +o Emitter <1 Om, = Breakdow: Voltage (Raps oO | eacce | To=10uk TgF0 70 - | -| Vv Emitter to Baso iY, Ic=10mA Ip=0 Breakdown Voltage {espan0 c B 4 v DC Current Gain (Note1) Vog=5V Ig=4a | 20 | — | 100 | — Output Capacitance Vop=10V¥ Tp=0 feiMe| —_| 55 |_0 | pr Power Output (1) (Fig 1 Po(t Vees12oV. f=28MHz 5 _ ~ Power Output (2 Po (2, Veco=12V f=50MHz put (2) | Po(2) Pisgw yeteos 16 w Note 1 : Pulse Width$/00/S Duty Cycle$3% Fig 1 Output Power Tost Circuit (f+27 Miz) Input c A] 3 13 Output
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