2SC2023 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2023 DESCRIPTION ·
- With TO-220C package
- High breakdown voltage
APPLICATIONS
- Series regulator, switch, and general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A IB Base current 0.2 A PC Collector dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Fig.1 simplified outline (TO-220) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2023 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ; IB=0 300 V VCEsat Collector-emitter saturation voltage I C=1A; IB=0.2A 1.0 V ICBO Collector cut-off current V CB=300V ;IE=0 1.0 mA IEBO Emitter cut-off current V EB=6V; IC=0 1.0 mA hFE DC current gain I C=0.5 A ; VCE=4V 30 fT Transition frequency I C=0.2A ; VCE=12V 10 MHz Cob Collector output capacitance f=1MHz ; V CB=10V 75 pF Switching times ton Turn-on time 0.30 μs ts Storage time 4.00 μs tf Fall time IC=1A, IB1=0.1A IB2=-0.2A; VCC=100V RL=100Ω 1.00 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2023 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)