2SC1975 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC1975
DESCRIPTION
- Collector-Base Breakdown Voltage : V(BR)CBo=160V(Min)
- Withstands worst overload conditions.
APPLICATIONS
- Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCER VEBO ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ Tc-25'C Junction Temperature Storage Temperature Range VALUE 120 150 -55-150 UNIT V V V A W ^^p i ; i 1 2 ; 1 - PIN 1.BASE 2. COLLECTOR
3 EMITTER
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- * v '"t ±-^jt W.QOV * N ' " T ~1 K c i j DIM A B C D F G J K i Q R U V /*~\\ WIN 15.70 9.90 4.20 0.70 3.40 4.m 270 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 290 0.46 13.40 1.30 2.90 2.70 1 31 6.65 8.86 i *[*. J ? •• N.I Seiin-Condtictors reserves the right to change test conditions, parameter limits and package dimensions without 10 press. lloue\\cr. N.I Somi-Coiuliietors assumes no rcsponsihilily Cor an> errors or omissions discovered in its use. " N.I Senii-Condiiclors cncoura»es customers to \\erilv that datasheets are current hclbiv Quality Semi-Conducfors orders
Silicon NPN Power Transistor 2SC1975
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VCBO VCER VEBO VcE(sat) I CEO hFE COB fi Po PARAMETER Collector-Base Breakdown Voltage Collector- Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain Output Capacitance Current-Gain — Bandwidth Product Output power CONDITIONS lc=1mA;lB=0 lc=2mA; RBE=100O le=10uA; lc=0 lc= 2A; |B= 0.2A VCB= 40V ; IE= 0 lc=1A;VCE=5V |E=0;VCB=10V;ftest=1MHz lc=0.5A;VCE=5V Vcc=13.5V;f=27MHz;Pin=0.2W MIN 120 TYP. MAX 1.0 200 UNIT V V V V nA pF MHz W