2SC1975 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC1975
DESCRIPTION
- Collector-Base Breakdown Voltage : V (BR)CBO =160V(Min)
- Withstands worst overload conditions.
APPLICATIONS
- Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(T a =25 SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base V oltage 120 V V CER Collector-Emitter V oltage 90 V V EBO Emitter-Base Voltage 5 V I CM Collector Current 3 A P C Total Power Dissipation @ T C =25℃ 12 W T J Junction Temperature 150 ℃ T stg Storage Temperature Range -55~150
isc website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC1975
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V CBO Collector-Base Breakdown Voltage I C =1mA ; I B = 0 120 V V CER Collector- Emitter Breakdown Voltage I C =2mA ; R BE =100Ω 90 V V EBO Emitter-Base Breakdown Voltage I E =10uA ; I C = 0 5 V V CE (sat) Collector-Emitter Saturation Voltage I C = 2A; I B = 0.2A 1 V I CEO Collector Cutoff Current V CB = 40V ; I E = 0 1.0 μA h FE DC Current Gain I C =1A ; V CE =5V 50 200 C OB Output Capacitance I E = 0; V CB =10V; f test = 1MHz 60 pF f T Current-Gain—Bandwidth Product I C =0.5A;V CE =5V 80 MHz P O Output power Vcc=13.5V;f=27MHz;Pin=0.2W 1 W