2SC1953 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953 DESCRIPTION ·
- With TO-126 package
- Complement to type 2SA914
- High VCEO
APPLICATIONS
- For low-frequency power pre-amplification PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 50 mA ICM Collector current-peak 100 mA PC Collector power dissipation 1.2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=0.1mA;IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ;IC=0 5 V VCEsat Collector-emitter saturation voltage I C=30mA ;IB=3mA 1 V ICBO Collector cut-off current V CB=100V; IE=0 1 μA hFE DC current gain I C=10mA ; VCE=5V 130 330 COB Output capacitance I E=0 ; VCB=10V;f=1MHz 3 pF fT Transition frequency I E=-10mA ; VCB=10V 70 MHz hFE Classifications R S 130-220 185-330
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953 PACKAGE OUTLINE Fig.2 Outline dimensions
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953