2SC1953 SAVANTIC
Document overview
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- PDF pages: 4
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953
DESCRIPTION
- With TO-126 package
- Complement to type 2SA914
- High VCEO
APPLICATIONS
- For low-frequency power pre-amplification PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 50 mA ICM Collector current-peak 100 mA PC Collector power dissipation 1.2 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=0.1mA;IB=0 150 V V(BR)EBO Emitter-base breakdown voltage I E=10µA ;IC=0 5 V VCEsat Collector-emitter saturation voltage I C=30mA ;IB=3mA 1 V ICBO Collector cut-off current V CB=100V; IE=0 1 µA hFE DC current gain I C=10mA ; VCE=5V 90 450 COB Output capacitance I E=0 ; VCB=10V;f=1MHz 3 pF fT Transition frequency I E=-10mA ; VCB=10V 70 MHz hFE Classifications Q R S T 90-155 130-220 185-330 260-450
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953 PACKAGE OUTLINE Fig.2 Outline dimensions
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953