2SC1904 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1904 DESCRIPTION ·
- With TO-126 package
- Complement to type 2SA899
APPLICATIONS
- For high frequency power amplification PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 50mA A PD Total power dissipation TC=25℃ 1 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1904 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=1mA; RBE=∞ 150 V V(BR)CBO Collector-base breakdown voltage I C=10μA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage I E=10μA ;IC=0 5 V VCEsat Collector-emitter saturation voltage I C=10mA ;IB=1mA 0.5 V VBEsat Base-emitter saturation voltage I C=10mA ;IB=1mA 1.0 V ICBO Collector cut-off current V CB=140V; IE=0 1 μA IEBO Emitter cut-off current V EB=4V; IC=0 1 μA hFE DC current gain I C=10mA ; VCE=5V 35 500 COB Output capacitance I E=0 ; VCB=10V;f=1MHz 3 pF fT Transition frequency I C=10mA ; VCE=5V 70 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1904 PACKAGE OUTLINE F i g . 2 O u t l i n e d i m e n s i o n s