2SC1828 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1828
DESCRIPTION
- With TO-66 package
- Continuous collector current-IC=1A
- Power dissipation –PC=40W @TC=25℃
APPLICATIONS
- For power amplifier applications PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 1 A PT Total power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-66) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1828 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=100mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage I C=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage I C=1A; IB=0.2A 1.5 V ICBO Collector cut-off current V CB=800V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=6V; IC=0 0.1 mA hFE DC current gain I C=0.2A ; VCE=10V 30 200 fT Transition frequency I C=0.1A ; VCE=10V 10 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1828 PACKAGE OUTLINE Fig.2 Outline dimensions