2SC1828 SAVANTIC

Document overview

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Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1828

DESCRIPTION

  • With TO-66 package
  • Continuous collector current-IC=1A
  • Power dissipation –PC=40W @TC=25

APPLICATIONS

  • For power amplifier applications PINNING (See Fig.2) PIN DESCRIPTION

1 Base

2 Emitter

3 Collector

Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 1 A PT Total power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-66) and symbol

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1828 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=100mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage I C=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage I C=1A; IB=0.2A 1.5 V ICBO Collector cut-off current V CB=800V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=6V; IC=0 0.1 mA hFE DC current gain I C=0.2A ; VCE=10V 30 200 fT Transition frequency I C=0.1A ; VCE=10V 10 MHz

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1828 PACKAGE OUTLINE Fig.2 Outline dimensions