2SC1826 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1826
DESCRIPTION
- With TO-220 package
- Collector current :IC=4A
- Collector power dissipation :PC=30W@TC=25℃
APPLICATIONS
- For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 4 A PC Collector power dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1826 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ;IB=0 60 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage I C=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current V CB=80V;IE=0 100 μA IEBO Emitter cut-off current V EB=6V; IC=0 100 μA hFE DC current gain I C=1A ; VCE=4V 40 320 fT Transition frequency I C=0.5A ; VCE=12V 10 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1826 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)