2SC1667 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1667
DESCRIPTION
- With TO-3 package
- Low collector saturation voltage
- Excellent safe operating area
APPLICATIONS
- For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 90 V VCEO Collector-emitter voltage Open base 90 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A PD Total Power Dissipation T C=75℃ 50 W Tj Junction temperature 175 ℃ Tstg Storage temperature -55~175 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1667 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=50mA ;IB=0 90 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.3A 1.0 V VBE sat Base-emitter saturation voltage I C=3A; IB=0.3A 1.5 V ICBO Collector cut-off current V CB=90V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=7V; IC=0 0.1 mA hFE DC current gain I C=1A ; VCE=4V 40 200 fT Transition frequency I C=0.5A ; VCE=10V 10 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1667 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm)