2SC1624 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625
DESCRIPTION
- With TO-220 package
- Complement to type 2SA814/815
- High breakdown voltage
APPLICATIONS
- Medium power amplifier applications
- Driver stage amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC1624 120 VCBO Collector-base voltage 2SC1625 Open emitter 100 V 2SC1624 120 VCEO Collector-emitter voltage 2SC1625 Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1 A IE Emitter current -1 A PC Collector power dissipation TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC1624 120 V(BR)CEO Collector-emitter breakdown voltage 2SC1625 IC=10mA; IB=0 100 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage I C=500mA; IB=50m A 0.5 V VBE Base-emitter on voltage I C=500mA ; VCE=5V 1.0 V ICBO Collector cut-off current V CB=50V;IE=0 1.0 μA IEBO Emitter cut-off current V EB=5V; IC=0 1.0 μA hFE-1 DC current gain I C=150mA ; VCE=5V 70 240 hFE-2 DC current gain I C=500mA ; VCE=5V 40 COB Output capacitance I E=0; VCB=10V;f=1MHz 20 pF fT Transition frequency I C=150mA ; VCE=5V 30 MHz hFE-1 Classifications O Y 70-140 120-240
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)