2SC1623-HF_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA High Voltage: VCE O = 50 V hFE Classification www.kexin.com.cn Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatlovesabotrotcelloC CBO 60 V VegatlovrettimeotrotcelloC CEO 50 V VegatlovesabotrettimE EBO 5 V I)CD(tnerrucrotcelloC C 100 mA PnoitapissidrewoprotcelloC C 200 mW TerutarepmetnoitcnuJ j 150 TegnarerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 *. PW 350 us,duty cycle 2% Type 2SC1623-L4-HF 2SC1623-L5-HF 2SC1623-L6-HF 2SC1623-L7-HF Range 90-180 135-270 200-400 300-600 Marking L4 F L5 F L6 F L7 F Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 100 Emitter cut-off current IEBO VEB= 5V , IC=0 100 Collector-emitter saturation voltage * VCE(sat) IC=100 mA, IB=10mA 0.15 0.3 Base - emitter saturation voltage * VBE(sat) IC=100 mA, IB=10mA 0.86 1 Base - emitter voltage * VBE VCE= 6V, IC= 1mA 0.55 0.7 DC current gain * hFE VCE= 6V, IC= 1mA 90 200 600 Collector output capacitance Cob VCB= 6V, IE= 0,f=1MHz 3 pF Transition frequency fT VCE= 6V, IE= -10mA 250 MHz V nA V 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC1623-HF
SMD Type Dio desSMD Type Transistors www.kexin.com.cn Typical Characteristics 011 100 1000 0010111.0 100 1000 0 25 50 75 100 125 150 100 150 200 250 0010111.0 100 0010111.0 100 1000 0111.0 0.1 0.1 100 0 2 4 6 8 ICfT — — COMMON EMITTER VCE=6V Ta=25℃ COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) β=10 ICVBEsat — — BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ 2000 PC — — Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (mW) Ta=100 ℃ Ta=25℃ β=10 ICVCEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREMT IC (mA) 300 IChFE — — Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= 6V f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib — — Cob Cib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) IC — — VBE T a=25℃ T a=100℃ COMMON EMITTER VCE=6V Static Characteristic COMMON EMITTER Ta=25℃ 10uA 8uA 7uA 6uA 5uA 4uA 3uA 9uA 2uA IB=1uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) NPN Transistors 2SC1623-HF