2SC1609 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1609 DESCRIPTION ·
- With TO-3 package
- High current capability
- Fast switching speed
APPLICATIONS
- Motor control
- Linear and switching applications PINNING(see fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 25 A ICM Collector current-peak 30 A PT Total power dissipation T C=25℃ 120 W Tj Junction temperature 175 ℃ Tstg Storage temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.17 ℃/W Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1609 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A; IB=0 120 V V(BR)EBO Emitter-base breakdown voltage I E=1mA; IC=0 6 V VCEsat-1 Collector-emitter saturation voltage I C=10A;IB=1A 0.6 V VCEsat-2 Collector-emitter saturation voltage I C=20A;IB=2A 1.2 V VBEsat Base-emitter saturation voltage I C=20A;IB=2A 2.0 V ICBO Collector cut-off current V CB=140V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=6V; IC=0 0.1 mA hFE-1 DC current gain I C=13A ; VCE=2V 20 100 hFE-2 DC current gain I C=20A ; VCE=4V 10
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1609 PACKAGE OUTLINE Fig.2 Outline dimensions