2SC1577 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1577
DESCRIPTION
- With TO-3 package
- High voltage
- High speed switching
APPLICATIONS
- For switching regulator and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A PC Collector power dissipation T C=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1577 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ;IB=0 400 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=5A; IB=1A 0.5 V VBEsat Base-emitter saturation voltage I C=5A; IB=1A 1.3 V ICBO Collector cut-off current V CB=500V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=7V; IC=0 0.1 mA hFE DC current gain I C=3A ; VCE=4V 30 fT Transition frequency I C=0.5A ; VCE=12V 7 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1577 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)