2SC1576 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1576
DESCRIPTION
- With TO-3 package
- High voltage,high speed
APPLICATIONS
- For high voltage ,fast switching
PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 330 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A PT Total power dissipation T C≤25℃ 100 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance from junction to case 1.25 ℃/W Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1576 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=100mA ; IB=0 330 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage I C=5A; IB=0.8A 1.5 V VBEsat Base-emitter saturation voltage I C=5A; IB=0.8A 1.8 V ICBO Collector cut-off current V CB=450V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=7V; IC=0 0.1 mA hFE DC current gain I C=1A ; VCE=5V 30 150
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1576 PACKAGE OUTLINE Fig.2 Outline dimensions