2SC1567 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Jbzmi-CondiLcto'i t-Producti, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC1567
DESCRIPTION
- Collector-Emitter Breakdown Voltage •-. : V(BR)CEO= 100V(Min)
- Good Linearity of hFE
- Complement to Type 2SA794
APPLICATIONS
- Designed for low-frequency high power driver.
- Optimum for the driver stage of low-frequency and 40W to 100W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL VCBO VCEO VEBO Ic ICP PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25°C Junction Temperature Storage Temperature Range VALUE 100 100 0.5 1.2 150 -40-150 UNIT V V V A A W r
- ^ PIN 1. EMITTER 2. COLLECTOR 3. BASE 123 , TO-126 package K~B^ L-F i A r — » i ; H - r D-» — * G G - — < — »- i • • 2 3 DIM A B C D F G H J K R V Q T V ~*1 t A K ~* mm MtN 10JO 7JO 2.60 0.66 3.10 4.4S 2.00 1.35 15.30 3JO 0.40 1.17 MAX 10.95 7,90 280 0,36 3.30 4.68 2,20 1.55 H6.M 3,90 0.60 1.37 cr~ i i i r-j *-R N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\vithout noiiee. liiKormation furnished by N,l Semi-Conductors is believed to he holh accurate and reliable til Iht' time ot'miii lo press. I lo\\\\c\\er. N.I Semi-Coiuluctors assumes no responsibility lor anv errors or omissions discovered in its use. N.I Seini-Conduclors encourages customers lo \\crily that datasheets are cimvnl beloiv placing orders. Qualily Semi-Conductors
Silicon NPN Power Transistor 2SC1567
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VcE(sat) VsE(sat) hpE-1 hFE-2 fr COB PARAMETER Collector-Emitter Breakdown Voltage . Emitter-Base Breakdown Vltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 0.1mA; IB= 0 !E=1u A;lc=0 lc= 500mA; IB= 50mA lc= 500mA; IB= 50mA lc=1 50mA; VCE= 10V lc= 500mA; VCE= 5V IE= -50mA ;VCB= 10V lE=0;VcB=10V,ftest=1MHz MIN 100 TYP. 120 MAX 0.4 1.2 330 UNIT V V V V MHz PF
- hFE1 Classifications Q 90-155 R 130-220 S 185-330