2SC1567 ISC
Document overview
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Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION ·
- With TO-126 package
- Complement to type 2SA794/794A
- High collector to emitter voltage VCEO
APPLICATIONS
- For low-frequency high power driver applications
- Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC1567 100 VCBO Collector-base voltage 2SC1567A Open emitter 120 V 2SC1567 100 VCEO Collector- emitter voltage 2SC1567A Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.5 A ICM Collector current-peak 1 A PD Total power dissipation T C=25℃ 1.2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55 ～+150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC1567 100 V(BR)CEO Collector-emitter breakdown voltage 2SC1567A IC=0.1mA ;IB=0 120 V V(BR)EBO Emitter-base breakdown voltage I E=1μA ;IC=0 5 V VCEsat Collector-emitter saturation voltage I C=0.5A ;IB=50m A 0.2 0.4 V VBEsat Base-emitter saturation voltage I C=0.5A ;IB=50m A 0.85 1.2 V hFE-1 DC current gain I C=150mA ; VCE=10V 65 330 hFE-2 DC current gain I C=0.5A ; VCE=5V 50 COB Output capacitance I E=0 ; VCB=10V;f=1MHz 11 pF fT Transition frequency I C=50mA ; VCE=10V,f=200MHz 120 MHz hFE-1 Classifications R S 130-220 185-330
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A PACKAGE OUTLINE F i g . 2 O u t l i n e d i m e n s i o n s