2SA794A PANASONIC
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1Publication date: February 2003 SJD00001BED 2SA0794 (2SA794), 2SA0794A (2SA794A) Silicon PNP epitaxial planar type For low-frequency output driver Complementary to 2SC1567, 2SC1567A ■ Features
- High collector-emitter voltage (Base open) VCEO
- Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier
- TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ Absolute Maximum Ratings Ta = 25°C ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm 1: Emitter 2: Collector 3: Base Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE1 90 to 155 130 to 220 Parameter Symbol Rating Unit Collector-base voltage 2SA0794 V CBO −100 V (Emitter open) 2SA0794A −120 Collector-emitter voltage 2SA0794 V CEO −100 V (Base open) 2SA0794A −120 Emitter-base voltage (Collector open) V EBO −5V Collector current I C − 0.5 A Peak collector current I CP −1A Collector power dissipation P C 1.2 W Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage 2SA0794 V CEO IC = −100 µA, IB = 0 −100 V (Base open) 2SA0794A −120 Emitter-base voltage (Collector open) V EBO IE = −1 µA, IC = 0 −5V Forward current transfer ratio h FE1 * VCE = −10 V, IC = −150 mA 90 220 hFE2 VCE = −5 V, IC = −500 mA 50 100 Collector-emitter saturation voltage V CE(sat) IC = −500 mA, IB = −50 mA − 0.2 − 0.4 V Base-emitter saturation voltage V BE(sat) IC = −500 mA, IB = −50 mA − 0.85 −1.20 V Transition frequency f T VCB = −10 V, IE = 50 mA, f = 200 MHz 120 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF (Common base, input open circuited) Note) The part numbers in the parenthesis show conventional part number. 8.0+0.5 –0.1 1.9±0.1 3.05±0.1 3.8±0.3 11.0±0.516.0±1.0 3.2±0.2 0.75±0.1 0.5±0.1 2.3±0.2 4.6±0.2 0.5±0.1 1.76±0.1 123 φ 3.16±0.1
2SA0794, 2SA0794A
2 SJD00001BED
IC VBE VCE(sat) IC VBE(sat) IC PC Ta IC VCE IC IB hFE IC fT IE Cob VCB 0 160 40 120 80 1.6 1.2 0.8 0.4 Collector power dissipation PC (W) Ambient temperature Ta (°C) −1.2 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 TC = 25°C IB = −20 mA −2 mA −4 mA −6 mA −8 mA −18 mA −10 mA −12 mA −16 mA −14 mA Collector current IC (A) Collector-emitter voltage VCE (V) −1.2 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 VCE = −10 V TC = 25°C Base current IB (mA) Collector current IC (A) − 0.6 − 0.5 − 0.4 − 0.3 − 0.2 − 0.1 VCE = −10 V Ta = 125°C −25°C 75°C Base-emitter voltage VBE (V) Collector current IC (A) − 0.01 − 0.1 −1 − 0.01 − 0.1 IC / IB = 10 TC = 100°C 25°C −25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) − 0.01 − 0.01 − 0.1 − 0.1 −1 IC / IB = 10 TC = −25°C 25°C 100°C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (A) 1 000 100 − 0.01 − 0.1 −1 VCE = −10 V TC = 100°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (A) 1 10 100 120 200 160 VCB = −10 V f = 200 MHz TC = 25°C Transition frequency fT (MHz) Emitter current IE (mA) −1 −10 −100 IE = 0 f = 1 MHz TC = 25°C Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V)
2SA0794, 2SA0794A 3SJD00001BED ICEO Ta ICBO Ta Safe operation area 102 103 105 104 ICEO (Ta) ICEO (Ta = 25°C) 02 0 0 1601208040 VCE = 20 V Ambient temperature Ta (°C) 102 103 104 ICBO (Ta) ICBO (Ta = 25°C) 01 6 0 40 120 80 VCB = −20 V Ambient temperature Ta (°C) − 0.001 − 0.01 − 0.1 −10 −10 −100 −1 000 Single pulse TC = 25°C t = 10 ms t = 1 s ICP IC Collector current IC (A) Collector-emitter voltage VCE (V)
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