2SC1501 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501
DESCRIPTION
- With TO-126 package
- High breakdown voltage
- Large power dissipation
APPLICATIONS
- For medium power amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.1 A ICM Collector current-peak 0.15 A PC Collector power dissipation T C=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=100μA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage I C=1mA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100μA; IC=0 5 V VCEsat Collector-emitter saturation voltage I C=100mA IB=10m A 5.0 V VBE Base-emitter on voltage I C=50mA ; VCE=10V 1.2 V hFE-1 DC current gain I C=10mA ; VCE=10V 30 hFE-2 DC current gain I C=50mA ; VCE=10V 30 200 ICBO Collector cut-off current V CB=300V ; IE=0 100 μA COB Output capacitance I E=0; VCB=30V;f=1MHz 8 pF fT Transition frequency I E=20mA ; VCB=30V 55 MHz hFE-2 classifications P Q R S 30-60 50-100 80-150 100-200
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 PACKAGE OUTLINE Fig.2 outline dimensions