2SC1501 ETC
Document overview
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Technical content
{ : Power Transistors 2SC1501 Silicon PNP Triple-Diffused Planar Type Medium Power Amplifier m Package Dimensions Unit : mm -M Features 7.52 2.9402 © High collector-emitter voltage (resistance between B'and E) (Vcer) | ty mi © Large collector power dissipation (Pc) , ANE Hy ol $ EX DE Z| ides Fy rte @ Absolute Maximum Ratings (Ta=25°C) | | | } Item Symbol Unit 0.7520.31 | []0.520.1 { * Collector-base voltage Vv | Lo 2,340.2 OT 1260.1 > Collector-emitter voltage | St 60.2 (RoeS3kQ) Veer 300. ¥ -(eaa-m] 2+: Collector |. Peak collector current mA 3: Base Collector power dissipation (Te=25°C) 0 | W F Storage temperature. —55~ +150 Cc es . » @ Electrical Characteristics (Te=25°C) =s Collector cutoff current Icon | Wer=S00V, Rap=31G re ~ Emitter-base voltage VeEso Ig=0.1mA, Ic=0 [ 5/ | Vv DC current gain : FEL Vee c= l0.mA [fT Base-emitter voltage Vce=10V, Ic=50 mA ne V Collector-emitter saturation voltage Ic=100 mA, Ip=10 mA a ee V Base resistance Tob | Vcp=50V, Ic=20mA ff io] a Transition frequency Veg=30V, Is=~20mA,{=200MHz | | 55 | |S MHz Collector output capacitance Vcs=30V, Ie=0, f=1 MHz a ee pF *hre2 Classifications ast P| a] Ts vhrez 30~60 50~ 100 80~ 150 100~ 200