2SC1419 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1419
DESCRIPTION
- With TO-220 package
- Large collector power dissipation
APPLICATIONS
- For medium power amplifier applicattions PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation T C=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1419 CHARACTERISTICS Tj=25℃ unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=30mA ,IB=0 50 V V(BR)CBO Collector-base breakdown voltage I C=1mA ,IE=0 50 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ,IC=0 5 V VCEsat Collector-emitter saturation voltage I C=1A; IB=0.1A 1.0 V VBEsat Base-emitter saturation voltage I C=1A; IB=0.1A 1.5 V ICBO Collector cut-off current V CB=50V; IE=0 100 μA IEBO Emitter cut-off current V EB=5V; IC=0 100 μA hFE DC current gain I C=1A ; VCE=4V 35 320 fT Transition frequency I C=0.5A ; VCE=10V 5 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1419 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)