2SC1418 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1418
DESCRIPTION
- With TO-220 package
- Large collector power dissipation
APPLICATIONS
- For medium power amplifier applicattions PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector- emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation T C=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1418 CHARACTERISTICS Tj=25 unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=30mA ,IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 50 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ,IC=0 5 V VCEsat Collector-emitter saturation voltage I C=1A; IB=0.1A 1.0 V VBEsat Base-emitter saturation voltage I C=1A; IB=0.1A 1.5 V ICBO Collector cut-off current V CB=50V; IE=0 100 µA IEBO Emitter cut-off current V EB=5V; IC=0 100 µA hFE DC current gain I C=1A ; VCE=4V 35 320 fT Transition frequency I C=0.5A ; VCE=10V 5 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1418 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)