2SC1413 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 DESCRIPTION ·
- With TO-3 package
- High voltage ,high speed
APPLICATIONS
- For TV horizontal deflection output
PINNING(see fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A PT Total power dissipation T C=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A; IB=0 500 V V(BR)EBO Emitter-base breakdown votage I E=1.0mA; IC=0 5 V VCEsat Collector-emitter saturation voltage I C=5 A;IB=1.2 A 10 V VBEsat Base-emitter saturation voltage I C=5 A;IB=1.2 A 2 V ICBO Collector cut-off current V CB=1200V;IE=0 1.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 1.0 mA hFE DC current gain I C=1A ; VCE=5V 8
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 PACKAGE OUTLINE Fig.2 Outline dimensions