2SC1316 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1316
DESCRIPTION
- With TO-66 package
- High breakdown voltage
APPLICATIONS
- Suitable for switching power supplies in TV sets PINNING PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 750 V VCEO Collector-emitter voltage Open base 750 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A PC Collector power dissipation T C=25℃ 23 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-66) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1316 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;IB=0 750 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage I C=1A ;IB=0.2A 3.0 V VBEsat Base-emitter saturation voltage I C=1A ;IB=0.2A 1.2 V ICBO Collector cut-off current V CB=750V;IE=0 100 μA IEBO Emitter cut-off current V EB=5V; IC=0 100 μA hFE DC current gain I C=2A ; VCE=3V 4 14 fT Transition frequency I C=0.5A ; VCE=10V 8.5 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1316 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)