2SC1170A ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A
DESCRIPTION
- With TO-3 package
- High voltage ,high speed
APPLICATIONS
- Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A IB Base current 1.0 A PC Collector power dissipation T C=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 2.5 ℃/W Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=100mA ;IB=0 500 V VCEsat Collector-emitter saturation voltage I C=2.5A; IB=0.6A 10 V VBEsat Base-emitter saturation voltage I C=2.5A; IB=0.6A 1.2 V ICES Collector cut-off current V CE=1400V; VBE=0 1.0 mA ICBO Collector cut-off current V CB=800V; IE=0 20 μA IEBO Emitter cut-off current V EB=5V; IC=0 20 μA hFE-1 DC current gain I C=0.5A ; VCE=10V 10 hFE-2 DC current gain I C=3A ; VCE=10V 5 fT Transition frequency I C=0.5A ; VCE=10V 4 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)