2SC1161 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161
DESCRIPTION
- With TO-66 package
- Low collector saturation voltage
APPLICATIONS
- For low frequency high voltage power amplifier TV vertical deflection output applications. PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 1 A PD Total power dissipation T C=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-66) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA ;IB=0 120 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage I C=500mA; IB=50mA 1.5 V VBE sat Base-emitter saturation voltage I C=500mA; IB=50mA 2.0 V ICBO Collector cut-off current V CB=120V; IE=0 1.0 μA IEBO Emitter cut-off current V EB=6V; IC=0 1.0 μA hFE DC current gain I C=200mA ; VCE=5V 30 200 fT Transition frequency I C=200mA ; VCE=10V 5 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 PACKAGE OUTLINE Fig.2 outline dimensions