2SC1161 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161
DESCRIPTION
- With TO-66 package
- Low collector saturation voltage
APPLICATIONS
- For low frequency high voltage power amplifier TV vertical deflection output applications. PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 1 A PD Total power dissipation TC=25? 15 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Fig.1 simplified outline (TO-66) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 1.5 V VBE sat Base-emitter saturation voltage IC=500mA; IB=50mA 2.0 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 µA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 µA hFE DC current gain IC=200mA ; VCE=5V 30 200 fT Transition frequency IC=200mA ; VCE=10V 5 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 PACKAGE OUTLINE Fig.2 outline dimensions