2SC1108 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1108 DESCRIPTION ·
- With TO-220C package
- High breakdown voltage :VCEO=100V
- High current :4A
APPLICATIONS
- For power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A PC Collector power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1108 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA; IB=0 100 V V(BR)EBO Emitter-base breakdown votage I E=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage I C=3A;IB=0.3 A 1.5 V VBEsat Base-emitter saturation voltage I C=3A;IB=0.3 A 2.0 V ICBO Collector cut-off current V CB=100V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=5V; IC=0 0.1 mA hFE DC current gain I C=1A ; VCE=4V 100 320 fT Transition frequency I C=0.5A ; VCE=12V 10 MHz COB Output capacitance I E=0; VCB=10V;f=1MHz 25 pF
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1108 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)