2SC1004 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1004 DESCRIPTION ·
- With TO-3 package
- High breakdown voltage
APPLICATIONS
- For use in horizontal deflection output stages for color TV receives. PINNING(see fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.5 A PT Total power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1004 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A; IB=0 700 V V(BR)EBO Emitter-base breakdown votage I E=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage I C=150m A;IB=30mA 5.0 V VBEsat Base-emitter saturation voltage I C=150m A;IB=30mA 1.5 V ICBO Collector cut-off current V CB=800V;IE=0 10 μA IEBO Emitter cut-off current V EB=4V;IC=0 10 μA hFE DC current gain I C=150m A ; VCE=15V 30 160 fT Transition frequency I C=150m A ; VCE=15V 2.0 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1004 PACKAGE OUTLINE Fig.2 Outline dimensions