2SB996 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB996
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)
- Good Linearity of hFE
- Complement to Type 2SD1356
APPLICATIONS
- Power amplifier applications.
- Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -0.4 A PC Collector Power Dissipation @TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB996
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.7 V VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -30 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -5V 40 240 hFE-2 DC Current Gain IC= -3A; VCE= -5V 15 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 130 pF fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 9 MHz hFE-1 Classifications R O Y 40-80 70-140 120-240