2SB995 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
uctoi L/^ , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB995
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=-100V(Min)
- Low Collector Saturation Voltage- : VCE(sa.)= -2.0V(Max)@ lc= -4A
- Complement to Type 2SD1355
APPLICATIONS
- Power amplifier applications.
- Recommended for SOW high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25T) SYMBOL VGBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature VALUE -100 -100 -0.5 150 -55-150 UNIT V V V A A W w FIH: 1 Base ' i 2 Collector ' ^ ' 3 Eaitter TO-220C package Mo A f *
- * B M -. v H L-l J-£A '-•• * H_ 'J K C A or *U- 0 n.08 DIIV A B C D F G H J K L R S U V mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 --S MB^ » f*"" J N.I Semi-Conductois reserves the right to change tost conditions, parameter limits and package dimensions \\\\ithout notice. In formation furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going lo press. I lo\\\\ever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Seini-Conduclors enaiuru»es customers to verily that datasheets ore current before placing orders. Quality 5enii-Conductors
Silicon PNP Power Transistor 2SB995
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(OH) ICBO IEBO hpE-1 hFE-2 COB fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 lc= -4A; IB= -0.4A lc= -4A; VCE= -5V VCB=-100V; IE=0 VEB= -5V; lc= 0 lc= -1A; VCE= -5V lc= -4A; VCE= -5V |E=0;VCB=-10V;f,est=1MHz lc= -1A; VCE= -5V MIN -100 TYP. 270 MAX -2.0 -1.5 -100 -1.0 240 UNIT V V V U A mA PF MHz
- hpE-1 Classifications R 40-80 O 70-140 Y 120-240