2SB995 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB995
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -100V(Min)
- Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ IC= -4A
- Complement to Type 2SD1355
APPLICATIONS
- Power amplifier applications.
- Recommended for 30W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous -0.5 A PC Collector Power Dissipation @TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB995
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -2.0 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 40 240 hFE-2 DC Current Gain IC= -4A; VCE= -5V 20 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 270 pF fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 5 MHz hFE-1 Classifications R O Y 40-80 70-140 120-240 isc Website：www.iscsemi.cn 2