2SB995 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB995
DESCRIPTION
- With TO-220C package
- High current capacity
- Low collector saturation voltage
APPLICATIONS
- For audio frequency amplifier output stage applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -5 A PC Collector power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB995 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-30mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage I C=-1mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown votage I E=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage I C=-3A;IB=-0.3 A -1.0 V VBEsat Base-emitter saturation voltage I C=-3A;IB=-0.3 A -1.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.1 mA hFE-1 DC current gain I C=-1A ; VCE=-5V 40 240 hFE-2 DC current gain I C=-3A ; VCE=-5V 20 fT Transition frequency I C=-1A ; VCE=-5V 5 MHz
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB995 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)