2SB994 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, U na.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB994

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- : V(BR,CEO= -60V(Min)
  • Collector Power Dissipation- : Pc= 30W@ Tc= 25'c
  • Low Collector Saturation Voltage- :VCE(sa.)= -1.0V(Max)@lc=-3A
  • Complement to Type 2SD1354

APPLICATIONS

  • Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @Ta=25°C Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE -60 -60 -0.5 1.5 150 -55-150 UNIT V V V A A W „ /-,,, 2 FIB: 1 Base ; . ; 2 Collector ' ' 3 Emitter 1 ' 2' TO-220C package j *Ui A » t VIJI-, j-eft .-> H 1 j K H c i J DIN A B C D F G H J K L R S V mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 r ij N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithont notice. Information furnished by NJ Semi-Conductors is believed lo be both accurate and reliable at the time of going to pross. llnue\\er. N.I Semi-Conductors Assumes no rosponsihilitv for an> errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verity that datasheets are current before- placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor 2SB994

ELECTRICAL CHARACTERISTICS

Tj=25'C unless otherwise specified SYMBOL VJBRJCEO VcE(sat) VsE(on) ICBO IEBO hpE-1 l"lFE-2 COB fy PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS lc= -50mA; IB= 0 lc= -3A; IB= -0.3A lc= -0.5A; Vce= -5V VCB= -60V; IE= 0 VEB= -7V; lc= 0 lc= -0.5A; VCE= -5V lc= -3A; VCE= -5V lE=0;VcB=-10V;f,est=1MHz lc= -0.5A; VCE= -5V MIN -60 TYP. 150 MAX -1.0 -1.0 -100 -100 200 UNIT V V V uA MA PF MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time Vcc= -30V, RL=15n, IB-F -Is2= -0.2A, 0.4 1.7 0.5 u S u s u s hFE..| Classifications 60-120 Y 100-200