2SB994 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB994
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -60V(Min)
- Collector Power Dissipation- : PC= 30W@ TC= 25℃
- Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -3A
- Complement to Type 2SD1354
APPLICATIONS
- Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous -0.5 A Collector Power Dissipation @Ta=25℃ 1.5 PC Collector Power Dissipation @TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB994
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -0.5A; VCE= -5V 60 200 hFE-2 DC Current Gain IC= -3A; VCE= -5V 20 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 150 pF fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 9 MHz Switching Times ton Turn-on Time 0.4 μs tstg Storage Time 1.7 μs tf Fall Time VCC= -30V, RL= 15Ω, IB1= -IB2= -0.2A, 0.5 μs hFE-1 Classifications O Y 60-120 100-200 isc Website：www.iscsemi.cn 2