2SB993 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB993
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min)
- Collector Power Dissipation- : Pc= 40W@ Tc= 25'C
- Low Collector Saturation Voltage- : VcE<Mtf -0.4V(Max)@ |c= -4A
- Complement to Type 2SD1363
APPLICATIONS
- High current switching applications.
- Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25X:) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @Ta=25'C Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature VALUE -70 -50 1.5 150 -55-150 UNIT V V V A A W <r**. • 2 * ^. FIH: 1 Base 1 • 2 Collector J 3 Enitter "•' 2 TO-220C package MQ A » j VV.TU ^erL r H K T H IT nr <= r : i DtIV A B C D F G H J K L Q R S u V mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 — | N.I Semi-Conductors reserves the right to change tost conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of iioi lo press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encoura»es customers lo \\erify thai datasheets are current before placing orders. Quality 5emi-Conductors
Silicon PNP Power Transistor 2SB993
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VsE(sat) ICBO IEBO hpE-1 hFE-2 COB fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -50mA; IB= 0 |c= -4A; IB= -0.4A lc= -4A; IB= -0.4A VCB= -70V; IE= 0 VEB= -5V; lc= 0 lc= -1A; VCE= -1V lc= -4A; VCE= -1V lE=0;VcB=-10V;f,est=1MHz lc= -1A; VCE= -4V MIN -50 TYP. 250 MAX -0.4 -1.2 -30 -50 240 UNIT V V V MA UA PF MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time VCc= -30V, RL=10n, lsi= -lB2= -0.3A, 0.2 2.5 0.5 M s u s u s Classifications 70-140 Y 120-240