2SB993 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB993
DESCRIPTION
- With TO-220 package
- Low collector saturation voltage
- Large current capacity
APPLICATIONS
- Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector- emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -7 A ICM Collector current-peak -10 A PC Collector power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB993 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-1mA ,RBE=8 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -70 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -7 V VCEsat Collector-emitter saturation voltage I C=-4A; IB=-0.4A -0.4 V ICBO Collector cut-off current V CB=-50V; IE=0 -10 µA IEBO Emitter cut-off current V EB=-4V; IC=0 -10 µA hFE-1 DC current gain I C=-1A ; VCE=-1V 70 240 hFE-2 DC current gain I C=-4A ; VCE=-1V 30 fT Transition frequency I C=-1A ; VCE=-5V 10 MHz
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB993 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)